Fast Recovery Diode Modules AFF150 ... AFF450 Replacement

Fast Recovery Diode Modules are monolithic design with dual or single topology of semiconductor (diode-diode and single diode type). Used in DC and AC circuits with loads to 450A and reverse pulse voltages up to 4500V.

Fast Recovery Diode Modules ASFF AS ENERGITM is a replacement, equivalent and alternative semiconductor device for diode modules AFF Poseico.

The fast recovery diode modules are housed in a standard industrial case making it easy to easy integrate of the device into existing equipment.

The modules are designed and assembled in high reliable pressure contact which addresses the specific requirements of cost and performance optimized applications.

Connection diagram of modules: AFFhalf-bridge; AFF-Kcommon cathode circuit; AFF-Acommon anode circuit.

Main Characteristics: Insulation voltage (RMS) from 4.5 kV to 6 kV; Full hermetic package; Base plate insulation using AlN substrate; Industrial compatible package; Improved recovery softness.

Fast Recovery Diode modules are used in various power equipment - power and control units, electrical drives, power regulators, AC regulators, converters, controllers of blast furnaces or chemical processes, welding equipment, and as rectifiers for AC converters.

Our power modules are offered in several dual and single device topologies for almost all phase control or rectifier applications.

Our company provides a quality guarantee for thyristor / diode modules of 2 years from the date of purchase. When supplying thyristor / diode modules, if necessary, we provide technical passport and certificate of conformity.

The final price of thyristor / diode modules depends on the class, quantity, delivery terms, manufacturer, country of origin and form of payment.

For questions regarding the acquisition of Power Modules, Thyristors, Diodes, send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


General specifications of Fast Recovery Diode Modules Vishay Replacements

Type IF(AV)M
(TC,°C)
VRRM
VDRM
IFSM VT0 rT Rth(j-c) Tvj max W Dimensions L×B×H Replacement
AS ENERGITM
Data sheet
A V A V mΩ °C/kW ºC g mm PDF
AFF150K 150 (55) 3300 2500 1.70 7.400 105 125 1500 144х60х52 ASFF150K
AFF150 150 (55) 3300 2500 1.70 7.400 105 125 1500 144х60х52 ASFF150
AFF150A 150 (55) 3300 2500 1.70 7.400 105 125 1500 144х60х52 ASFF150A
AFF230K 208 (100) 2600 5000 1.15 1.500 125 150 1500 144х60х52 ASFF230K
AFF230 208 (100) 2600 5000 1.15 1.500 125 150 1500 144х60х52 ASFF230
AFF230A 208 (100) 2600 5000 1.15 1.500 125 150 1500 144х60х52 ASFF230A
AFF300 252 (70) 2600 5000 1.15 0.685 105 125 1500 144х60х52 ASFF300
AFF300A 252 (70) 2600 5000 1.15 0.685 105 125 1500 144х60х52 ASFF300A
AFF300K 252 (70) 2600 5000 1.15 0.685 105 125 1500 144х60х52 ASFF300K
AFF350 356 (55) 4500 9000 2.70 1.400 50 125 1500 144х60х52 ASFF350
AFF350A 356 (55) 4500 9000 2.70 1.400 50 125 1500 144х60х52 ASFF350A
AFF350K 356 (55) 4500 9000 2.70 1.400 50 125 1500 144х60х52 ASFF350K
AFF450 448 (100) 4500 10000 1.40 0.750 50 150 1500 144х60х52 ASFF450
AFF450A 448 (100) 4500 10000 1.40 0.750 50 150 1500 144х60х52 ASFF450A
AFF450K 448 (100) 4500 10000 1.40 0.750 50 150 1500 144х60х52 ASFF450K
AFF450AHVI 450 (80) 4500 10000 1.40 0.750 50 150 1500 144х60х52 ASFF450AHVI
AFF450KHVI 450 (80) 4500 10000 1.40 0.750 50 150 1500 144х60х52 ASFF450KHVI
AFF450HVI 450 (80) 4500 10000 1.40 0.750 50 150 1500 144х60х52 ASFF450HVI

Part Numbering Guide for Fast Recovery Diode Modules:

AS FF 450 A - 45
AS brand AS ENERGITM
FF Product group: Fast Recovery Diode Module.
450 Average forward current: IT(AV), Amp.
A Connection diagram of modules:
AFF - half-bridge;
AFF-A - common anode;
AFF-K - common cathode.
.
45 Voltage code VRRM / 100.

Types of circuit diagrams according to the marking part:

Half-bridgeHalf-bridge Common cathodeCommon cathode
AFF AFF-A
Common anodeCommon anode
AFF-K

Recommendations for mounting power modules

Heatsink and Surface Specifications, Preparation

In order to ensure good thermal contact and to obtain the thermal contact resistance values specified in the datasheets, the contact surface of the heat sink must be clean and free from dust particles. It is useful to clean the mounting surface of the heat sink with wipes and an alcohol cleaner, e.g. isopropanol, right before the mounting process. The following mechanical specifications have to be met:
– Unevenness of heat sink mounting area must be ≤ 50μm per 100 mm
– Roughness Rz: < 10 μm
– No steps > 10 μm


Heat sink surface specification

Applying Thermal Paste

Recommended to use stencil printing in order to apply thermal interface material. Recommended to use thermal paste thickness in the range from 50 μm to 100 μm. Applying thermal paste by means of roller is not recommended for mass production as reproducible of an optimized thermal paste thickness cannot be guaranteed.

Mounting torque on heat sink MS

To secure power modules, the use of steel screws in combination with suitable washers and spring lock washers or combination screws is strongly recommended. The specified in datasheet torque value must be observed.

A pre-tightening torque and retightening to the given torque value is recommended. For the screwing process the speed has to be limited and soft torque limitation is recommended to avoid torque peaks, which may occur with pneumatic screwdrivers.


Example of mounting order

The screws must be tightened in diagonal order with equal torque in several steps until the specified torque value MS has been reached.


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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